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Nanoelectronics

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Our interest in nanoelectronics has shifted from design automation to fundamental device physics and materials by working with Professor Tour from Rice Chemistry and Professor Natelson from Rice Physics.

  • Mian Dong and Lin Zhong, "Logic synthesis with nanowire crossbar: Reality check and standard cell-based integration," in Proc. IEEE Design Automation & Test in Europe Conf (DATE), March 2008. (PDF)
  • Mian Dong and Lin Zhong, "Challenges to crossbar integration of nanoscale two-terminal symmetric memory devices," in Proc. IEEE Int. Conf. Nanotechnology, August 2008. (PDF)
  • Jun Yao, Lin Zhong, Douglas Natelson, and James M. Tour, "Etching-dependent reproducible memory switching in vertical SiO2 structures," in Applied Physics Letters, vol. 93, issue 25, 2008
  • Mian Dong and Lin Zhong, "Nanowire crossbar logic and standard cell-based integration," in IEEE Trans. on Very Large Scale Integration Systems, August 2009.
  • Jun Yao, Lin Zhong, Zengxing Zhang, Tao He, Zhong Jin, Patrick J. Wheeler, Douglas Natelson, and James M. Tour, "Resistive switching in nanogap systems on SiO2 substrates,"  in Small, 5 (24), pp.2910-2915, 2009. (PDF)
  • Jun Yao, Zhong Jin, Lin Zhong, Douglas Natelson, and James M. Tour, "Two-terminal nonvolatile memories based on single-walled carbon nanotubes," in ACS Nano, 3 (12), pp. 4122-4126, 2009. (PDF)
  • Jun Yao, Zhengzong Sun, Lin Zhong, Douglas Natelson, and James Tour, "Resistive switches and memories from silicon oxide," in ACS Nano Letters, 2010. (Link)
  • Jun Yao, Lin Zhong, Douglas Natelson, and James Tour, "Intrinsic resistive switching and memory effects in silicon oxide," in Applied Physics A (Materials Science & Processing), 102 (4), pp. 835-839, 2011.
  • Jun Yao, Lin Zhong, Douglas Natelson, and James Tour, "Silicon Oxide is a non-innocent surface for molecular electronics and nanoelectronics studies," Journal of the American Chemical Society, 133 (4), pp. 941-948, 2011.

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